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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1190 DESCRIPTION With TO-220 package High VCEO Large PC Complement to type 2SD1772 APPLICATIONS Power amplifier TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Fig.1 simplified outline (TO-220) and symbol Collector-base voltage INCH Collector-emitter voltage Emitter-base voltage ANG EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -200 -150 -6 -1 -2 UNIT V V V A A Collector current Collector current-peak Ta=25ae 1.4 W 25 150 -55~150 ae ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SB1190 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-5mA , B=0 -150 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=-0.5mA ,IC=0 IC=-500mA; IB=-50mA -6 V Collector-emitter saturation voltage -1.0 V VBE Base-emitter on voltage IC=-300mA ; VCE=-10V -1.0 V ICBO Collector cut-off current VCB=-200V; IE=0 -50 |I A IEBO Emitter cut-off current VEB=-4V; IC=0 -50 |I A hFE-1 DC current gain hFE-2 COB DC current gain Output capacitance ANG CH P IC=-100mA ; VCE=-10V 60 240 IC=-300mA ; VCE=-10V IE=0 ; VCB=-10V,f=1MHz fT Transition frequency hFE-1 Classifications Q 60-140 IN EMIC ES IC=-100mA ; VCE=-10V OND TOR UC 50 35 20 pF MHz 100-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1190 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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